It was stated that the thickness of Ge‐doped GaAs‐ and Al x Ga 1− x As epitaxial layers, respectively, grown by equilibrium cooling from a gallium rich flux, varies with the Ge concentration in the liquid phase. This relationship was applied to calculate an quaternary Ga‐Al‐As‐Ge phase diagram by means of the law of mass action.
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Geselle et al. (1981) studied this question.
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