Epitaxial gallium arsenide and gallium aluminium arsenide layers were grown from gallium solution on chromium‐doped semi‐insulating gallium arsenide. The effect of residual water concentration in the ambient gas atmosphere on change of aluminium in AlxGa1−xAs was determined. It was shown that a water concentration less than 5 ppm is necessary to grow epitaxial layers with high reproducible XAlAs‐content and low carrier concentration.
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Herrmann‐Westendorf et al. (1980) studied this question.
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