The hole transport properties of Zn-doped In 1- x Ga x P have been examined. The thermal ionization energy of Zn was found to increase with alloy composition. The Hall mobility of holes at 300 K was 10-50 cm 2 /Vs for material with p =10 17 -10 18 cm -3 and was independent of alloy composition. The Hall mobility was analyzed by taking account of p-like valence bands. The experimental mobility is in good agreement with the calculation. The most dominant scattering mechanism at 300 K was acoustic and nonpolar optical phonon scattering. The influence of the space charge scattering mechanism was considerable over the entire temperature range 60-300 K. The effective hole mass ratio in In 1- x Ga x P was estimated to be 0.7±0.2.
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Kato et al. (1980) studied this question.
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