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High-dose (300 keV) ion implant damage has been observed, by infrared microscopy, to extend approximately 1.4 times the junction depth or 4 times the projected range. No such damage has been seen for shallow implants that were diffused to a corresponding junction depth. Leakage currents were identical for both implant conditions. No ``tailing'' was identified in the profile that could explain the extent of damage.
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Bogardus et al. (1973) studied this question.
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