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September 4, 2023Applied Physics Letters

Interface charge engineering on an in situ SiNx/AlGaN/GaN platform for normally off GaN MIS-HEMTs with improved breakdown performance

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Authors

JHJiaqi HeKWKangyao WenPWPeiran Wang

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He et al. (2023) studied this question.

synapsesocial.com/papers/6a70ad1df44fa9f079de5d6ahttps://doi.org/10.1063/5.0169944
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