Answers are grounded in this paper and cite their sources.
We have calculated the chemical trends of the main interfacial defects expected for III-V semiconductor:oxide interfaces, for GaAs, InGaAs, InP, and GaSb. This includes the anion-anion dimer bond, the cation (Ga) dangling bond, and the anion (As) dangling bond. The anion-anion dimer bond state is found to lie below the cation dangling bond state in each system and is the first to enter the gap from the conduction band. The anion dangling bond state can lie just above the valence band edge if partially filled and is the likely cause of gap states above the valence band edge.
No takes yet. Share an insight, caveat, or question.
Lin et al. (2013) studied this question.
Synapse has enriched 10 related papers. Consider them for comparative context: