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A new poly-Si thin-film-transistor (TFT) current-mirror-active-matrix-organic-light-emitting-diode (AMOLED) pixel, which successfully compensates for the variation of the threshold voltage as well as mobility in the excimer laser annealed poly-Si TFT pixel, is designed and fabricated. The OLED current (IOLED) of the proposed pixel does not depend on the operating temperature. When the temperature of pixel is increased from 27 degC to 60 degC, the IOLEDof the new pixel circuit composed of four TFTs and one capacitor increases only about 1.5%, while that of a conventional pixel composed of two TFTs and one capacitor increases about 37%. At room temperature, nonuniformity of the IOLEDin the proposed circuit was also considerably suppressed at around 9%. We have successfully fabricated a 1.2-in AMOLED panel (96times96timesred green blue) to evaluate the performance of the proposed pixel. A troublesome residual image caused by the hysteresis phenomenon of the poly-Si TFT was almost eliminated in the proposed AMOLED panel as a result of current programming
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Lee et al. (2006) studied this question.
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