Answers are grounded in this paper and cite their sources.
We report an indium phosphide (InP)-on-silicon laser operating at short-wave infrared (SWIR) wavelengths, realized using micro-transfer printing (μTP) technology. Through thermal tuning of the integrated micro-ring resonators, the device is tunable from 1643 nm to 1707 nm, with mW-level output power at room temperature for a drive current of 100 mA on an amplifier. The laser cavities are fabricated on 200 mm silicon-on-insulator (SOI) wafers, featuring a 220 nm thick silicon device layer.
No takes yet. Share an insight, caveat, or question.
Guo et al. (2025) studied this question.
Synapse has enriched 10 related papers. Consider them for comparative context: