Oxide TFT inverter with wide output dynamic range

Demonstrated is an n-channel oxide thin film transistor (TFT) inverter which achieves wider output dynamic range than a conventional one over the large threshold voltage range of oxide semiconductors. A proposed circuit adopts the two-stage inverter structure with two negative supplies and brings about low power consumption and fast rising transition as well. Simulation results show that the dynamic range is increased by 55.08% while power consumption and rising time are reduced by 23.71% and 60.54%, compared to a conventional one, on average.