In Ga As ∕ Ga As /alkanethiolate radial superlattices

A radial InGaAs∕GaAs∕1-hexadecanethiol superlattice is fabricated by the roll-up of a strained InGaAs∕GaAs bilayer passivated with a molecular self-assembled monolayer. The technique allows the formation of multiperiod inorganic/organic hybrid heterostructures. The authors investigate the radial superlattices in a detailed transmission electron microscopy study. The structure consists of 11 tightly bonded semiconductor/organic layers with thicknesses and chemical compositions accurately controlled by epitaxial growth and self-assembly. Their chemical analysis reveals that neither any detectable oxygen contamination nor amorphization is present at the superlattice interfaces.