A systematic investigation is presented into the frequency response and differential gain in both strained and unstrained InGaAs/lnGaAsP 1.5 μm quantum well lasers. Both the differential gain and damping in strained devices were found to be similar in magnitude to comparable unstrained devices. In addition, the differential gain was found to increase and the damping to decrease with increasing numbers of quantum wells.
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Tatham et al. (1991) studied this question.