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January 1, 1994IEEE Journal of Quantum Electronics

Growth and fabrication of high-performance 980-nm strained InGaAs quantum-well lasers for erbium-doped fiber amplifiers

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Authors

MCM. ChandSCS. N. G. ChuNational Taiwan Normal UniversityNDNiloy K. DuttaUniversity of Connecticut

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Chand et al. (1994) studied this question.

synapsesocial.com/papers/6a70d94fa528af2d65c3c708https://doi.org/10.1109/3.283790
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  4. 4Performance characteristics of GaInAs/GaAs large optical cavity quantum well lasers1991 · 20 citations