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April 22, 1991Applied Physics Letters

Excellent uniformity and very low (50 A/cm2) threshold current density strained InGaAs quantum well diode lasers on GaAs substrate

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Authors

NCNaresh ChandNorth Maharashtra UniversityEBE. BeckerAT&T (United States)JZJ. P. van der ZielThe University of Texas at Dallas

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Chand et al. (1991) studied this question.

synapsesocial.com/papers/6a70d94fa528af2d65c3c716https://doi.org/10.1063/1.105114
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Also Consider

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  1. 1Growth condition studies of pseudomorphic InGaAs/GaAs strained layer structures and InGaAs/AlGaAs high electron mobility transistor layer properties1989 · 15 citations
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  3. 3Effect of confining layer aluminum composition on AlGaAs-GaAs-InGaAs strained-layer quantum well heterostructure lasers1990 · 22 citations
  4. 4Influence of substrate temperature and InAs mole fraction on the incorporation of indium during molecular-beam epitaxial growth of InGaAs single quantum wells on GaAs1989 · 44 citations
  5. 5High-temperature operation (to 180  °C) of 0.98 μm strained single quantum well In0.2Ga0.8As/GaAs lasers1991 · 20 citations