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A single multichip IMPATT diode, operating in the unconditional amplifying mode, has been used as a reflection amplifier in the 6–8 GHz range. C.W. power-output levels of 4.0 W have been achieved with a stable reflection-amplifier circuit, using two multichip diodes in separate cavities coupled to a single circulator through an airstrip hybrid. The gain of the amplifier is 6 dB, with 250 MHz (−1 dB) bandwidth.
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A.S. Bains (1972) studied this question.
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