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This Letter describes some electrical contact and properties of ZnS single crystals having -temperature resistivities in the range of 1 to 10 ohm-cm. Previous electrical transport measurements ZnS have been done mainly at high temperatures under photoexcitation. Electrical to ZnS which display ohmic characteristics room temperature have been described by Alfrey Cooke. A serious limitation to a more extensive of the electrical properties of ZnS been the difficulty in providing ZnS crystals contacts which would stay ohmic at low temperatures. has also been difficult to dope ZnS -type without simultaneously introducing large of native acceptor defects.
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Aven et al. (1965) studied this question.
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