A novel post-hydrogenation method for chemical-vapor-deposited amorphous-silicon (CVD a-Si) thin-film transistors (TFTs) has been proposed. Samples were annealed in the presence of the atomic hydrogen generated by a hot tungsten filament. The dependence of the amount of adsorbed hydrogen on annealing period, filament temperature and total gas pressure was described. A-Si TFTs which were post-hydrogenated by means of the hot-filament method showed an electron mobility of 1.1 cm 2 /V·s. The lifetime and diffusion length of atomic hydrogen were estimated.
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Sugiura et al. (1993) studied this question.
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