Hot ion-implantation into amorphous silicon (a-Si) has been studied for chemical-vapor-deposited films. Conductivity of as high as 0.4 S/cm (100 times higher than the previous result) was achieved at the phosphorus atom concentration of 8×10 20 cm -3 , when the substrate temperature was elevated up to 450°C during the ion-implantation. Activation energy was 0.12 eV.
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Satoh et al. (1991) studied this question.
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