Preparation of amorphous silicon films by chemical vapor deposition from higher silanes SinH2n+2(n≳1)

Amorphous silicon films have been prepared by chemical vapor deposition from higher silanes Sin H2n+2 (n≳1) in the temperature range 380–500 °C. The films show electrical properties comparable to those prepared by the plasma discharge of silanes. Gold Schottky devices were fabricated with internal short-circuit currents of 12 mA/cm2 under AM1 illumination over an area of 2.0 cm2.