An InGaAsP/InP separate-confinement double heterostructure having a broad gain profile was used to fabricate superluminescent diodes having high optical power (40 mW), a broad radiation spectrum (65 nm at half-width), and low percent modulation (<1%). Using a cw pump current of 150 mA, 1mW of superluminescence radiation was obtained at the exit from a single-mode optical fiber.
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Pikhtin et al. (1999) studied this question.
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