Organometallic vapor phase epitaxial growth of GaN on ZrN∕AlN∕Si substrates

An intermediate ZrN∕AlN layer stack that enables the epitaxial growth of GaN on (111) silicon substrates using conventional organometallic vapor phase epitaxy at substrate temperatures of ∼1000°C is reported. The epitaxial (111) ZrN layer provides an integral back reflector and Ohmic contact to n-type GaN, whereas the (0001) AlN layer serves as a reaction barrier, as a thermally conductive interface layer, and as an electrical isolation layer. Smooth (0001) GaN films less than 1μm thick grown on ZrN∕AlN∕Si yield 0002 x-ray rocking curve full width at half maximum values as low as 1230arcsec.