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December 29, 1997Applied Physics Letters

Analysis of a thin AlN interfacial layer in Ti/Al and Pd/Al ohmic contacts to n-type GaN

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Authors

BLB. P. LutherPennsylvania State UniversityJDJ. M. DeLuccaLSI Solutions (United States)SMSuzanne E. MohneyPennsylvania State University

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Luther et al. (1997) studied this question.

synapsesocial.com/papers/6a9d4f35f025b578bcd9aac2https://doi.org/10.1063/1.120526
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Also Consider

Synapse has enriched 4 closely related papers on similar clinical questions. Consider them for comparative context:

  1. 1Very low resistance multilayer Ohmic contact to n-GaN1996 · 463 citations
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  3. 3Interfacial chemical reactivity of metal contacts with thin native oxides of GaAs1981 · 53 citations
  4. 4Microstructure of Ti/Al and Ti/Al/Ni/Au Ohmic contacts for n-GaN1996 · 294 citations