Hexagonal pyramid shaped light-emitting diodes based on ZnO and GaN direct wafer bonding

The authors report on hexagonal pyramid shaped light-emitting diode (LED) based on ZnO and GaN wafer bonding. After direct wafer bonding of an n-type ZnO substrate to a III-nitride LED wafer, O-plane ZnO was selectively etched to form an electrode having a truncated hexagonal pyramid shape. This wafer bonded LED chip was evaluated with optical output power as a function of forward current and was 2.2 times higher than a conventional-type LED chip having thin Ni (5nm)∕Au (10nm) p-type electrode at forward current condition of 20mA.