Answers are grounded in this paper and cite their sources.
We have fabricated GaN-based light-emitting diodes using transparent indium tin oxide (ITO) p contacts. ITO-contacted devices required an additional 2 V to drive 10 mA, as compared to similar devices with metal contacts. However, ITO has lower optical absorption at 420 nm (α=664 cm−1) than commonly used thin metal films (α=3×105 cm−1). Uniform luminescence was observed in ITO-contacted devices, indicating effective hole injection and current spreading.
No takes yet. Share an insight, caveat, or question.
Margalith et al. (1999) studied this question.
Synapse has enriched 10 related papers. Consider them for comparative context: