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Nitrogen has been implanted in GaAs1−xPx crystals of direct (x=0.37) and indirect (x=0.50) compositions. Photoluminescence spectra for the implanted material are consistent with previously reported results for GaAs1−xPx with N incorporated during growth. Implantations were performed at 200 keV with fluences sufficient to produce calculated peak N concentrations in the range 1017−1019 cm−3. Samples heated to 200 °C during implantation exhibit improved annealing properties above 800 °C compared with room-temperature implantations.
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Streetman et al. (1974) studied this question.
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