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The red electroluminescence in gallium phosphide at the maximum quantum efficiency is a constant, independent of injection efficiency, for a series of liquid-phase epitaxially grown diodes which have common Zn- and O-doped p-type substrates and variable Te-doped n-type layers. This behavior and the subsequent decrease in quantum efficiency with increasing diode current are both explained in terms of the saturation of Zn-O complexes by captured electrons in the p region.
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Hackett et al. (1969) studied this question.
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