What question did this study set out to answer?

To characterize residual electrically active defect levels in low-dose carbon-implanted silicon after standard lattice reordering annealing.

June 15, 1971Applied Physics Letters

Residual Electrically Active Defects After Lattice Reordering in Ion-Implanted Silicon

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To characterize residual electrically active defect levels in low-dose carbon-implanted silicon after standard lattice reordering annealing.
Performed thermally stimulated current (TSC) measurements on low-dose carbon-implanted silicon samples.
Tracked defect energy levels and their recovery across post-reordering annealing temperatures exceeding 500°C.
Identified five distinct electrically active defect levels with activation energies ranging from 0.27 to 0.40 eV present after initial lattice reordering.
Demonstrated that all five defect levels exhibit similar recovery dynamics and persist up to temperatures above 500°C, defining a major high-temperature annealing stage.

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Implication

Experimental study reveals persistent defect levels in carbon-implanted silicon, indicating a high-temperature annealing stage beyond standard lattice reordering.

Cite This Study

Davies et al. (1971) studied this question.

synapsesocial.com/papers/6a70fe9c26a7f98052dd6e7f https://doi.org/10.1063/1.1653534

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Implication

Experimental study reveals persistent defect levels in carbon-implanted silicon, indicating a high-temperature annealing stage beyond standard lattice reordering.

Residual Electrically Active Defects After Lattice Reordering in Ion-Implanted Silicon

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Discussion

Implication

Cite This Study

Residual Electrically Active Defects After Lattice Reordering in Ion-Implanted Silicon

Key Points

Discussion

Implication

Cite This Study

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