What question did this study set out to answer?

To evaluate the removal of performance-degrading metallic impurities from diffused planar silicon diodes using intermediate-temperature gettering with inorganic oxides.

January 1, 1963Journal of The Electrochemical Society

Gettering of Metallic Impurities from Planar Silicon Diodes

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Authors

SIS. W. IngXerox (United States)RMRyan Morrison LALeslie L. Alt

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Implication

Experimental study demonstrates substantial reduction in reverse leakage currents in silicon planar diodes using inorganic oxide gettering, indicating a method to remove metal contaminants.

Key Points

To evaluate the removal of performance-degrading metallic impurities from diffused planar silicon diodes using intermediate-temperature gettering with inorganic oxides.
Treated diffused planar silicon diodes with inorganic oxide getters having melting points below the process temperature range of 800°C to 1000°C.
Conducted life test evaluations to measure diode stability and electrical performance over time.
Utilized radioactive copper as a diffused model contaminant to trace and quantify impurity removal efficacy.
Reduced reverse leakage currents in diffused silicon planar diodes by orders of magnitude following gettering.
Demonstrated effective extraction of metallic impurities confirmed through radioactive copper tracer experiments and device life testing.

Cite This Study

Ing et al. (1963) studied this question.

synapsesocial.com/papers/6a70ff12a7fbea1e440846a0 https://doi.org/10.1149/1.2425808

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Implication

Experimental study demonstrates substantial reduction in reverse leakage currents in silicon planar diodes using inorganic oxide gettering, indicating a method to remove metal contaminants.

Gettering of Metallic Impurities from Planar Silicon Diodes

Discussion

Member takes

Implication

Key Points

Cite This Study

Gettering of Metallic Impurities from Planar Silicon Diodes

Discussion

Member takes

Implication

Key Points

Cite This Study

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