January 1, 2017Journal of Materials Chemistry C

A self-powered broadband photodetector based on an n-Si(111)/p-NiO heterojunction with high photosensitivity and enhanced external quantum efficiency

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Abstract

A broadband photodetector based on n-Si(111)/p-NiO heterojunctions not only shows excellent photosensitivity and EQE, but also exhibits outstanding self-powered properties.

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Cite This Study

Zhang et al. (2017) studied this question.

synapsesocial.com/papers/6a7104faa528af2d65c3dd9a https://doi.org/10.1039/c7tc04565d

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Abstract

A broadband photodetector based on n-Si(111)/p-NiO heterojunctions not only shows excellent photosensitivity and EQE, but also exhibits outstanding self-powered properties.