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May 1, 1998Japanese Journal of Applied Physics

Electron Microscopy Study of Surfactant-Mediated Solid Phase Epitaxy of Ge on Si(111)

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NANoriyuki AizawaTokyo Gakugei UniversityYHYoshikazu HommaTokyo University of ScienceMTMasahito Tomita

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Cite This Study

Aizawa et al. (1998) studied this question.

synapsesocial.com/papers/6a7115cbac440176ef29c476https://doi.org/10.1143/jjap.37.2460
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  1. 1Thermally induced structural change of a-Ge:H/a-GeNx multilayer structures1989 · 20 citations
  2. 2Growth morphology and the equilibrium shape: The role of ‘‘surfactants’’ in Ge/Si island formation1993 · 223 citations
  3. 3Initial Stage and Domain Structure of GaAs Grown on Si(100) by Molecular Beam Epitaxy1987 · 70 citations
  4. 4Boron-controlled solid phase epitaxy of germanium on silicon: A new nonsegregating surfactant1994 · 12 citations