Synapse
⌘+K
Synapse
PulseExploreClubsResearchersJournals
Instagram
HomeClubsExplore
January 17, 1994Applied Physics Letters

Boron-controlled solid phase epitaxy of germanium on silicon: A new nonsegregating surfactant

View Full Paper
Ask AI
Bookmark
Share

Authors

JKJ. KlattTexas Instruments (United States)DKD. KrügerGerman Center for Neurodegenerative DiseasesEBE. BugielLeibniz University Hannover

Discussion

Loading...

Member takes

Overview

Key Points

Key points are not available for this paper at this time.

Cite This Study

Klatt et al. (1994) studied this question.

synapsesocial.com/papers/6a84fc0ffdbaab0d3e990ae6https://doi.org/10.1063/1.111148
View Full Paper
Ask AI
Bookmark
Share

Also Consider

Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context:

  1. 1Surfactant mediated epitaxial growth of InxGa1−xAs on GaAs (001)1992 · 82 citations
  2. 2Surfactant-controlled solid phase epitaxy of germanium on silicon1992 · 86 citations
  3. 3Surfactants in epitaxial growth1989 · 1,102 citations
  4. 4Sb/InP(100) interface: A precursor to surfactant-mediated Ge epitaxy1992 · 14 citations
  5. 5Growth morphology and the equilibrium shape: The role of ‘‘surfactants’’ in Ge/Si island formation1993 · 223 citations