The growth of p-type ZnO film was realized for the first time by the simultaneous addition of NH 3 in carrier hydrogen and excess Zn in source ZnO powder. The resistivity was typically 100 Ω·cm. A model showing nitrogen incorporation suggests the possibility of realizing p-type ZnO film of low resistivity by optimizing thermal annealing.
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Minegishi et al. (1997) studied this question.
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