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Dramatic enhancement of second harmonic generation (SHG) near the photonic band edge was observed in a one-dimensional ZnSe∕ZnMgS semiconductor photonic crystal (PC) structure. Over two orders of magnitude increase in SHG intensity was observed at the photonic band edge at ∼1400nm compared to the nonphase matching region. The maximum SHG conversion efficiency of 0.8% is observed in only seven micrometers length of crystal. This enhancement came from a combination of large ZnSe second order susceptibility coefficient (χ(2)), high density of optical modes and phase matching of the fundamental and second harmonic waves near the photonic band edge due to modification of the dispersion curve by the PC structure.
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Yang et al. (2005) studied this question.
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