High power single mode InGaAsP lasers fabricated by single step liquid phase epitaxy

Lasing properties of an InGaAsP (λ=1.3 μm) crescent-shaped buried heterostructure laser are presented. The structure was grown by single step liquid phase epitaxy on a mesa substrate. High output power in pulsed operation (150 mW/facet) and high external differential quantum efficiency (60%) are realized in this structure even though there is no special layer for current blocking. Fundamental mode operation up to a power level of 30 mW/facet is found. These characteristics are attributed to the effect of the mesa on current flow and they demonstrate the importance of substrate topography on laser performance.