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March 1, 1981Applied Physics Letters

Embedded epitaxial growth of low-threshold GaInAsP/InP injection lasers

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Authors

PCP. C. ChenCalifornia Institute of TechnologyKYKevin YuCalifornia Institute of TechnologySMS. MargalitCalifornia Institute of Technology

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Chen et al. (1981) studied this question.

synapsesocial.com/papers/6a6fbe25e5469ee92be098bchttps://doi.org/10.1063/1.92366
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Also Consider

Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context:

  1. 1Fabrication and characterization of narrow stripe InGaAsP/InP buried heterostructure lasers1980 · 93 citations
  2. 2Prevention of InP surface decomposition in liquid phase epitaxial growth1980 · 80 citations
  3. 3Embedded heterostructure epitaxy: A technique for two-dimensional thin-film definition1975 · 24 citations
  4. 4Room-temperature operation of GaInAsP/InP double-heterostructure diode lasers emitting at 1.1 μm1976 · 149 citations
  5. 5Low-threshold room-temperature embedded heterostructure lasers1976 · 11 citations