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June 22, 2007Japanese Journal of Applied Physics

GaN-Based Trench Gate Metal Oxide Semiconductor Field Effect Transistors with Over 100 cm2/(V s) Channel Mobility

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Authors

HOHirotaka OtakeROHMSEShin EgamiHOHiroaki OhtaKawasaki Medical School

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Otake et al. (2007) studied this question.

synapsesocial.com/papers/6a714ec28031ec7bb1dce28ahttps://doi.org/10.1143/jjap.46.l599
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