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December 28, 2004IEEE Transactions on Electron Devices

High-voltage normally off GaN MOSFETs on sapphire substrates

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Authors

KMKevin MatochaSemmelweis UniversityTCT. Paul ChowRensselaer Polytechnic InstituteRGR.J. GutmannLockheed Martin (United States)

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Matocha et al. (2004) studied this question.

synapsesocial.com/papers/6a714ec28031ec7bb1dce28fhttps://doi.org/10.1109/ted.2004.841355
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