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December 16, 1996Applied Physics Letters

High temperature characteristics of AlGaN/GaN modulation doped field-effect transistors

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Authors

ÖAÖzgür AktaşUnited States Naval Research LaboratoryZFZ. FanChina Electronics Standardization InstituteSMS. Noor MohammadUniversity of Basrah

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Aktaş et al. (1996) studied this question.

synapsesocial.com/papers/6a714ec28031ec7bb1dce292https://doi.org/10.1063/1.117133
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