Prebond TSV Detection for Coexistence of Open and Leakage Faults Based on Current Charging and Discharging

In the manufacturing process of 3-D integrated circuits, many defects can be found in through-silicon vias (TSVs), which can significantly affect the yield and reliability of the circuits. An effective prebond TSV detection method is the key to the commercialization of 3-D integrated circuits. We propose a method of prebond TSV detection based on the principle of current charging and discharging. This method can accurately detect both open fault and leakage fault under different process, supply voltage, and temperature (PVT) conditions. Through mathematical modeling of charge and discharge process and defects, the effective detection of the coexistence of open and leakage faults is realized. The proposed detection circuit can accurately detect the normalized position of the open fault and the degree of the leakage fault. Virtuoso simulation verifies the effectiveness and robustness of the proposed method. The fault detection capability, hardware overhead, and test time are also compared with the existing detection methods.