A formula for alloy-scattering-limited electron mobility in semiconductors is obtained for indirect gap systems with multiple band minima. All the input parameters needed are defined explicitly. The drift mobility of SixGe1−x which has a dip at x ∼0.13 and a broader minimum at x ∼0.5 is calculated by adding alloy scattering to other scattering mechanisms and correlates well with the measured Hall mobility.
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Krishnamurthy et al. (1985) studied this question.
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