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Theoretical calculations have been made of the electron mobility in several ternary III-V semiconductor systems. The scattering mechanisms included in the analysis are polar-optical-phonon scattering, piezoelectric scattering, alloy scattering, and ionized-impurity scattering. Models are also presented and discussed for the variations of material parameters with alloy composition which are needed in the mobility calculations.
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Harrison et al. (1976) studied this question.
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