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The creation of an electron-hole plasma in a semiconductor leads to a large band-gap shrinkage which can be used to obtain absorptive optical bistability caused by discontinuous jumps between states of weak band-tail absorption and states of strong band-edge absorption. These effects are described by rate equations for the photons and the free carriers. For CdS the calculated hysteresis phenomena are similar to the experimental results.
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Schmidt et al. (1984) studied this question.
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