Low dark current pin ultraviolet photodetectorsfabricated on GaN grown bymetal organic chemical vapour deposition

The authors report GaN pin photodetectors with very low dark currents (< 10 pA at –10 V), and high external quantum efficiencies (~35%). These photodetectors have a flat responsivity above the bandgap (measured at ~0.10 A/W) with a sharp, solar-blind cutoff at the band edge.