We present the first results of a planar Gunn diode made in In0.53Ga0.47As on an InP substrate, operating at a fundamental frequency up to 164 GHz. For a 120-μm-wide device with a 1.3- μm active channel length, the highest power achieved was approximately -10 dBm at 164 GHz.
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Khalid et al. (2012) studied this question.
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