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The dependence of brightness on the concentration ratio of fluorine to terbium was studied in thin-film electroluminescent devices with rf-sputtered ZnS:Tb,F active layers. It was found that the device exhibits a maximum brightness at the concentration ratio of about 1. By optimizing not only the concentration ratio but also the terbium concentration, a brightness more than 300 fL is obtained under 1 kHz pulse excitation.
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Ogura et al. (1986) studied this question.
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