Self-organised InAs quantum dots inserted in an (In, Ga)As matrix lattice matched to an InP substrate are used as an active region in an injection laser. Low threshold (11.4 A/cm2) lasing at 1.894 µm (77 K) via the states of the quantum dots is obtained. A material gain of the order of 104 cm–1 is estimated.
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Ustinov et al. (1998) studied this question.
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