Room-temperature operation of GaInAs/GaInAsP/InP SCH lasers with quantum-wire size active region

Improvements in the fabrication of GaInAs(P)/InP devices consisting of an ultrafine structure by using two-step organometallic vapor phase epitaxy (OMVPE) growth, electron beam exposure direct writing, and wet chemical etching are reported. This improved process achieved, for the first time, a room-temperature continuous-wave (CW) operation of GaInAs/InP quantum-wire lasers consisting of 5-nm-thick and 10-30-nm-wide vertically stacked triple quantum-wire active region within the period of 70 nm. A large blue shift of approximately 40 nm was observed in both the lasing and the electroluminescence spectra of Ga/sub 0.3/In/sub 0.7/As/InP compressively strained multi-quantum-well (MQW) wire lasers consisting of a 3-nm-thick and 30-60-nm-wide five-wire active region, which suggests a reduced effective mass of holes along the in-plane direction.>