Strain-induced carrier confinement in a buried stressor structure

The possibility of strain-induced confinement of carrier into wires and boxes in a buried stressor structure is theoretically investigated. The strain distribution and the corresponding strain induced modulation of the band gap is dependent not only on the material properties but also on the geometrical parameter of the structure. A potential well of 30 meV is available for both electron and light hole. For a box stressor, up to 60 meV modulation in the band gap is estimated for a GaAs QW parallel to the In0.35Ga0.65As stressor.