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June 15, 1987Applied Physics LettersOpen Access

Secondary ion mass spectrometry study of oxygen accumulation at GaAs/AlGaAs interfaces grown by molecular beam epitaxy

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TAT. AchtnichÉcole Polytechnique Fédérale de LausanneGBG. BürriUniversity of LausanneMPM. A. PyBoard of the Swiss Federal Institutes of Technology

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Achtnich et al. (1987) studied this question.

synapsesocial.com/papers/6a7186fa2163a0a01bc5a0b9https://doi.org/10.1063/1.97730
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