Liquid phase epitaxy of high-purity GaAs on conducting n-type substrates

The liquid phase epitaxial technique for the deposition of lightly doped n-type GaAs on conducting n-type substrates is described. The effect of the starting materials, in particular the substrates and the undoped source crystal, on the epitaxial layer properties has been observed for a fixed set of growth conditions. Schottky barriers fabricated on this material exhibit near ideal current-voltage characteristics with breakdown voltages approaching the theoretical limit.