Answers are grounded in this paper and cite their sources.
We demonstrate from Raman scattering on the AlAs-type optical vibrations in GaAs/AlAs superlattices that small but significant amount of gallium atoms segregate in the AlAs layers over more than 10 monolayers from the AlAs on GaAs interface. We discuss the growth temperature dependence of this effect and its consequences for a global description of the interface roughness in this system.
No takes yet. Share an insight, caveat, or question.
Jusserand et al. (1992) studied this question.
Synapse has enriched 10 related papers. Consider them for comparative context: